document number: 81170 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.2, 20-apr-10 1 silicon pin photodiode VBP104S, VBP104Sr vishay semiconductors description VBP104S and VBP104Sr are high speed and high sensitive pin photodiodes. it is a su rface mount device (smd) including the chip with a 4.4 mm 2 sensitive area detecting visible and near infrared radiation. features ? package type: surface mount ? package form: gw, rgw ? dimensions (l x w x h in mm): 6.4 x 3.9 x 1.2 ? radiant sensitive area (in mm 2 ): 4.4 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 65 ? floor life: 168 h, msl 3, acc. j-std-020 ? lead (pb)-free reflow soldering ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? high speed photo detector note ? test conditions see table ?basic characteristics? note ? moq: minimum order quantity 2196 8 v bp w 104s v bp w 104sr product summary component i ra (a) ? (deg) 0.1 (nm) VBP104S 35 65 430 to 1100 VBP104Sr 35 65 430 to 1100 ordering information ordering code packaging remarks package form VBP104S tape and reel moq: 1000 pcs, 1000 pcs/reel gullwing VBP104Sr tape and reel moq: 1000 pcs, 1000 pcs/reel reverse gullwing absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. refl ow solder profile fig. 8 t sd 260 c thermal resistance junction/ambient r thja 350 k/w
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81170 2 rev. 1.2, 20-apr-10 VBP104S, VBP104Sr vishay semiconductors silicon pin photodiode basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 11.3v breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 48 pf v r = 3 v, f = 1 mhz, e = 0 c d 17 40 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 32 a temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 25 35 a angle of half sensitivity ? 65 deg wavelength of peak sensitivity p 940 nm range of spectral bandwidth 0.1 430 to 1100 nm noise equivalent power v r = 10 v, = 950 nm nep 4 x 10 -14 w/ hz rise time v r = 10 v, r l = 1 k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 100 ns 20 40 60 8 0 1 10 100 1000 100 94 8 403 v r = 10 v t am b - am b ient temperat u re (c) i ro - re v erse dark c u rrent (na) 0.6 0. 8 1.0 1.2 1.4 94 8 409 v r =5 v = 950 nm 100 8 0 60 40 20 0 i - re lati v e re v erse light c u rrent t - am b ient temperat u re (c) am b ra rel
document number: 81170 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.2, 20-apr-10 3 VBP104S, VBP104Sr silicon pin photodiode vishay semiconductors fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. reverse voltage fig. 5 - diode capacitance vs. reverse voltage fig. 6 - relative spectral sensitivity vs. wavelength fig. 7 - relative radiant sens itivity vs. angular displacement 0.01 0.1 1 0.1 1 10 100 1000 10 94 8 421 v r = 5 v = 950 nm e e - irradiance (m w /cm 2 ) i ra - re v erse light c u rrent ( a) 0.1 1 10 1 10 100 v r - re v erse v oltage ( v ) 100 94 8 422 i ra - re v erse light c u rrent ( a) 1 m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 = 950 nm 0.1 1 10 0 20 40 60 8 0 c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 100 94 8 423 e = 0 f = 1 mhz 350 550 750 950 0 0.2 0.4 0.6 0. 8 1.0 1150 94 8 420 - w a v elength (nm) s( ) rel - relati v e spectral sensiti v it y 0.4 0.2 0 s rel - relati v e radiant sensiti v ity 94 8 406 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 ? - ang u lar displacement
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81170 4 rev. 1.2, 20-apr-10 VBP104S, VBP104Sr vishay semiconductors silicon pin photodiode package dimensions for VBP104S in millimeters drawing-no.: 6.541-5088.01-4 issue: 1; 15.04.10 22107 8.9 5.4 1.8 recommended solder pad specications according to din technical drawings anode cathode 2.2 0.18 0.2 4.4 0.1 1.95 3.9 0.1 1 0.15 6.4 0.3 0.8 0.1 1.6 0.1 1.2 0.1 chip size 2.4 x 2.4 0.1 - 0.1 (0.47 ref.) flat area 0.3 min. 0.75 0.05 0.15 0.02
document number: 81170 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.2, 20-apr-10 5 VBP104S, VBP104Sr silicon pin photodiode vishay semiconductors package dimensions for VBP104Sr in millimeters drawing-no.: 6.541-5087.01-4 issue: 1; 15.04.10 22106 8.9 5.4 1.8 recommended solder pad specications according to din technical drawings a node cathode 2.2 0.18 0.2 4.4 0.1 1.95 3.9 0.1 1 0.15 6.4 0.3 0.8 0.1 1.6 0.1 chip size 2.4 x 2.4 1.2 0.1 0.1 min. (0.47 ref.) flat area 0.3 min. 0.75 0.05 0.15 0.02
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81170 6 rev. 1.2, 20-apr-10 VBP104S, VBP104Sr vishay semiconductors silicon pin photodiode taping dimensions for VBP104S in millimeters taping dimensions for VBP104Sr in millimeters 21730 21731
document number: 81170 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.2, 20-apr-10 7 VBP104S, VBP104Sr silicon pin photodiode vishay semiconductors reel dimensions for VBP104S and VBP104Sr in millimeters solder profile fig. 8 - lead (pb)-free re flow solder profile acc. j-std-020 drypack devices are packed in moisture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life time between soldering and removing from mbb must not exceed the time indicated in j-std-020: moisture sensit ivity: level 3 floor life: 168 h conditions: t amb < 30 c, rh < 60 % drying in case of moisture absorption devices should be baked before soldering. conditions see j-std-020 or recommended conditions: 192 h at 40 c (+ 5 c), rh < 5 % or 96 h at 60 c (+ 5 c), rh < 5 %. 21732 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 19 8 41 255 c
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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